features x epitaxial planar die construction x complementary npn types available x built-in biasing resistors absolute maximum ratings @ 25 : symbol parameter min typ max unit i c collector current --- 100 --- ma v in input voltage -6 --- +40 v p d power dissipation --- 200 --- mw t j junction temperature --- 150 --- t stg storage temperature -55 --- 150 electrical characteristics @ 25 : symbol parameter min typ max unit v i(off) --- ---0.3 v v i(on) input voltage (v cc =5v, i o =100 - a) (v o =0.3v, i o =1ma) 1.4 --- --- v v o(on) output voltage (i o =5ma,i i =0.25ma) --- --- 0.3 v i i input current (v i =5v) --- --- 0.88 ma i o(off) output current (v cc =50v, v i =0) --- --- 0.5 - a g i dc current gain (v o =5v, i o =5ma) 68 --- --- r 1 input resistance 7 10 13 k ? r 2 /r 1 resistance ratio 3.7 4.7 5.7 f t transition frequency (v o =10v, i o =5ma, f=100mhz) --- 250 --- mhz .079 2.000 in ch es mm . 031 .800 .035 .900 . 037 .950 .037 .950 sot-23 suggested solder pad layout x marking : 64 epoxy meets ul 94 v-0 flammability rating moisure sensitivity level 1 npn digital transistor DTC114YCA 2012- 0 willas electronic corp. dimensions in inches and (millimeters) .080(2.04) .070(1.78) .110(2.80) .083(2.10) .006(0.15)min. .008(0.20) .003(0.08) .055(1.40) .035(0.89) .020(0.50) .012(0.30) .004(0.10)max. .122(3.10) .106(2.70) .063(1.60) .047(1.20) preliminary
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